PART |
Description |
Maker |
4N60-E 4N60G-T2Q-T 4N60G-TA3-T 4N60G-TMS2-T 4N60L- |
N-CHANNEL JUNCTIN SILICON FET
|
Unisonic Technologies
|
2SK435 2SK435E |
Silicon N Channel MOS FET Silicon N-Channel Junction FET TRANSISTOR | JFET | N-CHANNEL | 22V V(BR)DSS | 40MA I(DSS) | TO-92
|
Hitachi Semiconductor
|
2SJ540 |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
2SJ518 |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
2SJ548 |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
MTB3N120E_D ON2421 MTB3N120E MTB3N120E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 1200 VOLTS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTB2N60E_D ON2407 MTB2N60E MTB2N60E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 600 VOLTS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
2SK3718 |
N-channel Silicon J-FET N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
|
NEC[NEC]
|
2SK3230B |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM N-CHANNEL SILICON J-FET
|
NEC
|